BGA622 silicon germanium wide band low noise amplifier data sheet, dec. 2002 never stop thinking. wireless silicon discretes
edition 2002-12-18 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2002. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted char- acteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infin- eon technologies office in germany or our infineon techno logies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your n earest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
for questions on technology, delivery and prices please contact the infineon technologies offices in germany or the infineon technologies companies and representatives worldwide: see our webpage at http://www.infineon.com BGA622 data sheet revision history: 2002-12-18 previous version: 2002-09-13 page subjects (major changes since last revision) 5 - 6 min. / max. limits for gain and noise figure added
data sheet 4 2002-12-18 esd: electrostatic discharge sensitive device, observe handling precaution! type package marking chip BGA622 sot343 brs t0535 silicon germanium wide band low noise amplifier BGA622 vps05605 4 2 1 3 features ? high gain, |s 21 | 2 =14.8 db at 1.575 ghz |s 21 | 2 =13.9 db at 1.9 ghz |s 21 | 2 =13.3 db at 2.14 ghz |s 21 | 2 =12.7 db at 2.4 ghz low noise figure, nf=1.1 db at 2.14 ghz operating frequency range 0.5 - 6 ghz typical supply voltage: 2.75 v on/off - switch output-match on chip, input pre-matched low part count 70 ghz f t - silicon germanium technology applications lna for gsm, gps, dcs, pcs, umts, bluetooth, ism and wlan vcc,4 out,3 gnd,2 in,1 on/off 20 kohm description the BGA622 is a wide band low noise amplifier, based on infineon technologies? silicon germanium technology b7hf. in order to provide the lna in a small package the out-pin is simultaneously used for rf out and on/off switch. this functionality can be accessed using a rf-choke at the out pin, where a dc level of 0 v or an open switches the device on and a dc level of vcc switches the device off. while the device is switched off, it provides an insertion loss of 20 db together with a high iip3 up to 18 dbm.
BGA622 data sheet 5 2002-12-18 maximum ratings note: all voltages refer to gnd-node electrical characteristics at t a =25c (measured according to fig. 1) parameter symbol value unit voltage at pin vcc v cc 3.5 v voltage at pin out v out 4v current into pin in i in 0.1 ma current into pin out i out 1ma current into pin vcc i vcc 10 ma rf input power p in 6dbm total power dissipation, t s < 139 c 1) 1) t s is measured on the ground lead at the soldering point p tot 35 mw junction temperature t j 150 c ambient temperature range t a -65 ... +150 c storage temperature range t stg -65 ... +150 c thermal resistance: junction-soldering point r th js 300 k/w vcc=2.75 v, frequency=1.575 ghz, unless otherwise specified parameter symbol min. typ. max. unit insertion power gain |s 21 | 2 12.7 14.8 16.7 db insertion power gain (off-state) |s 21 | 2 -24 db input return loss (on-state) rl in 6db output return loss (on-state) rl out 12 db noise figure (z s =50 f 50 1.05 1.6 db input third order intercept point 1) (on-state) f=1mhz, p in =-28dbm 1) ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 to 6 ghz iip 3 0dbm input third order intercept point 1) (off-state) f=1mhz, p in =-8dbm iip 3 18 dbm input power at 1db gain compression p -1db -16.5 dbm total device off current, v cc =2.75v, v out =v cc i tot-off 260 a total device on current, v cc =2.75v i tot-on 5.8 ma
BGA622 data sheet 6 2002-12-18 electrical characteristics at t a =25c (measured according to fig. 1) vcc=2.75 v, frequency=2.14 ghz, unless otherwise specified parameter symbol min. typ. max. unit insertion power gain |s 21 | 2 11.4 13.3 15.0 db insertion power gain (off-state) |s 21 | 2 -20 db input return loss (on-state) rl in 8db output return loss (on-state) rl out 10 db noise figure (z s =50 f 50 1.1 1.6 db input third order intercept point 1) (on-state) f=1mhz, p in =-28dbm 1) ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 to 6 ghz iip 3 3dbm input third order intercept point 1) (off-state) f=1mhz, p in =-8dbm iip 3 18 dbm input power at 1db gain compression p -1db -13 dbm figure 1 s-parameter test circuit (loss-free microstrip test-fixture) figure 2 application circuit dc, 2.75v 150pf out, 50 in, 50 dc, 2.75v 150pf out in 2.2nh (for improved input match) 47pf (dc-block) dc, 2.75v rfc on/off switch 47pf (dc-block)
BGA622 data sheet 7 2002-12-18 off gain |s 21 | 2 = f(f) v cc = 2.75v, v out = 2.75v, i tot?off = 0.3m a 0 1 2 3 4 5 6 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 21 | 2 [db] matching |s 11 |, |s 22 | = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 ?24 ?22 ?20 ?18 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 reverse isolation |s 12 | = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 12 | [db] power gain |s 21 | 2 , g ma = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 0 5 10 15 20 25 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma
BGA622 data sheet 8 2002-12-18 stability k, b 1 = f(f) v cc = 2.75v, i tot?on = 5.8ma 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency [ghz] k, b 1 k b1 noise figure f = f(f) v cc = 2.75v, i tot?on = 5.8ma, z s = 50 ? 0 1 2 3 4 5 6 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 frequency [ghz] f [db] input compression point p ?1db = f(v cc ) f = 2.14ghz, t a = ?40 ... +85c 2.6 2.8 3 3.2 3.4 ?14 ?13.5 ?13 ?12.5 ?12 ?11.5 ?11 v cc [v] p ?1db [dbm] device current i tot?on = f(t a , v cc ) v cc = parameter in v ?40 ?20 0 20 40 60 80 5 5.5 6 6.5 7 7.5 8 8.5 t a [c] i tot?on [ma] 2.6 2.8 3 3.2 3.4
BGA622 data sheet 9 2002-12-18 package outline device current i tot?on = f(v cc , t a ) t a = parameter in c 2.6 2.8 3 3.2 3.4 5 5.5 6 6.5 7 7.5 8 8.5 v cc [v] i tot?on [ma] ?40 20 85 power gain |s 21 | 2 = f(v cc , t a ) f = 2.14ghz, t a = parameter in c 2.6 2.8 3 3.2 3.4 12 12.5 13 13.5 14 14.5 15 v cc [v] |s 21 | 2 [db] ?40 20 85 gps05605 1.25 0.1 0.1 max 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 1.3 2 0.2 b 0.1 0.9 12 3 4 a +0.1 0.6 acc. to +0.2 din 6784 a m 0.20 0.20 m b power gain |s 21 | 2 = f(t a , v cc ) f = 2.14ghz, v cc = parameter in v ?40 ?20 0 20 40 60 80 12 12.5 13 13.5 14 14.5 15 t a [c] |s 21 | 2 [db] 2.6 3 3.4
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